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| Low Noise Amplifier 1.575 GHz Features q q q q q AM50-0002 V 2.00 SO-8 Low Noise Figure: 1.15 dB High Gain: 27 dB Low Power Consumption: 3 to 5 V, 20 mA High Dynamic Range Low Cost SOIC 8 Plastic Package Description M/A-COM's AM50-0002 is a high performance GaAs MMIC low noise amplifier in a low cost SOIC 8-lead surface mount plastic package. The AM50-0002 employs a monolithic 3-stage self-bias design and a simple external matching network to obtain minimum noise figure. It can be biased using 3- or 5-volt supplies. The AM50-0002 is ideally suited for use where low noise figure, high gain, high dynamic range and low power consumption are required. Typical applications include receiver front ends in the Global Positioning System (GPS) market, as well as standard gain blocks, buffer amps, driver amps and IF amps in both fixed and portable systems. M/A-COM's AM50-0002 is fabricated using a mature 0.5micron gate length GaAs process. The process features full passivation for increased performance reliability. Electrical Specifications1 Parameter Gain Noise Figure Input VSWR Output VSWR Output1 dB Compression Input IP3 Reverse Isolation Bias Current TA = +25C, Z0 = 50, VDD = +5V, PIN = -35 dBm, f= 1.575 GHz w w .D w Units dB dB dBm dBm dB mA t a S a e h t e U 4 .c m o Ordering Information Part Number Package SOIC 8-Lead Plastic Forward Tape and Reel* Reverse Tape and Reel* Designer's Kit AM50-0002 AM50-0002TR AM50-0002RTR AM50-0002SMB If specific reel * assignment. size is required, consult factory for part number Min. 25 Typ. 27 1.15 2.0:1 1.5:1 1 -14 48 Max. 29 1.4 15 20 25 1. See following pages for 3-volt data. w w w .D a at S e he t 4U . om c Low Noise Amplifier AM50-0002 V 2.00 Absolute Maximum Ratings Parameter VDD Input Power Channel Temperature2 Operating Temperature Storage Temperature 1 Functional Diagram GND GND Absolute Maximum +10 VDC +17 dBm +150C -40C to 85C -65C to 150C T1 RF IN T2 GND GND 1. Operation of this device outside these limits may cause permanent damage. 2. Typical thermal resistance ( jc) = +165C/W RF OUT, VDD GND GND Recommended PCB Configuration Dimensions in inches (mm) 0.244 (6.20) 0.072 (1.83) 0.060 (1.52) 2X R 0.025 (0.64) PLATED THRU T1 T2 Frequency = 1.575 GHz Impedance Electrical Length 57.2 36.0 82.7 16.2 RF IN 0.024 (0.61) 0.109 (2.77) 0.112 (2.84) 0.245 (6.22) RF OUT 0.060 (1.52) 0.172 (4.37) 0.030 (0.76) 3. Pins 1, 3, 4, 5, 7 and 8 must be RF and DC grounded as shown. 4. Pin 2 is the RF input and must be connected to the simple matching network shown. 5. Pin 6 is the RF output. VDD is also applied on pin 6. 12 X R 0.008 (0.20) PLATED THRU FR-4 circuit board, thickness = 0.016 inches (0.41) Typical Performance GAIN vs FREQUENCY, T = +25C A 28 5V 26 24 3V 22 20 1.3 1.4 1.5 1.6 FREQUENCY (GHz) 1.7 1.8 1.1 5V 1.0 1.50 1.52 1.54 1.56 FREQUENCY (GHz) 1.58 1.60 1.3 3V 1.2 1.4 NOISE FIGURE vs FREQUENCY, TA = +25C Low Noise Amplifier AM50-0002 V 2.00 VSWR vs FREQUENCY @ 5 V, TA = +25C 3.0 2.5 2.0 1.5 1.0 1.3 1.4 1.5 1.6 1.7 1.8 FREQUENCY (GHz) Output -12 INPUT IP3 vs FREQUENCY, TA = +25C 5V Input -13 -14 -15 -16 1.50 1.52 1.54 1.56 1.58 1.60 FREQUENCY (GHz) 3V GAIN vs FREQUENCY @ 5 V 28 26 24 22 20 1.3 1.4 1.5 1.6 1.7 1.8 FREQUENCY (GHz) +85C 1.6 -40C +25C 1.4 NOISE FIGURE vs FREQUENCY @ 5 V +25C 1.2 1.0 0.8 1.50 1.52 1.54 1.56 -40C +85C 1.58 1.60 FREQUENCY (GHz) Additional information is available in Application Note M540, "M/A-COM GaAs MMIC LNA SOIC-8 Platform." |
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